Semiconductor device

ABSTRACT

A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G 1 , a source lead S 1 , and a drain lead D 2  are arranged from left to right on the first surface of the package and a drain lead D 1 , a source lead S 2 , and a gate lead G 2  are arranged from left to right on the second surface. A gap between the source lead S 1  and the drain lead D 2  is two times a gap between the gate lead G 1  and the source lead S 1 , and a gap between the drain lead D 1  and the source lead S 2  is two times a gap between the source lead S 2  and the gate lead G 2.

CROSS-REFERENCE

This is a continuation application of U.S. Ser. No. 11/649,253, filedJan. 4, 2007, which is a continuation application of U.S. Ser. No.10/972,410, filed Oct. 26, 2004, now U.S. Pat. No. 7,173,333.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and anelectronic device and a technology effectively applied to, for example,a semiconductor device that has a plurality of semiconductor chips, eachof which has a transistor formed therein, in a package and has a highbreakdown voltage.

2. Description of the Related Art

As one of the semiconductor devices has been known a semiconductordevice having a structure (so-called SOP8 type) in which twosemiconductor chips each having a transistor formed therein is mountedin a package and in which four leads are protruded from each side of onepair of sides opposite to each other of the package (for example,JP-A-2000-217416).

A plurality of power MOS FETs are used for a motor control, a powersupply, and the like. A composite power MOS FET (transistor) studied bythe inventors includes two power MOS FETs. FIGS. 21 to 24 areillustrations related to a conventional semiconductor device 80 in whichtwo power MOS FETs (transistors) are packaged in a single package.

The semiconductor device 80, as shown in a schematic plan view in FIG.21 and in a schematic sectional view in FIG. 23, outwardly, has astructure in which four leads 82 are protruded in a gull wing shape fromeach side of one pair of sides (long sides) opposite to each other of aflat and square package 81. In FIG. 21, the leads 82 are denoted byreference numerals from 1 to 8 as lead terminal numbers. These referencenumerals are thought to be arranged anticlockwise along the periphery ofthe package. That is, a shown in FIG. 21, the leads 82 are denoted alongthe lower side of the package 81 from the left to the right by thereference numerals 1 to 4 and are denoted along the upper side from theright to the left by the reference numerals 5 to 8.

For example, a lead located at a lead terminal 1 is a source electrodeterminal (S1). Similarly, a lead terminal 2 is a gate electrode terminal(G1) and lead terminals 8 and 7 are drain electrode terminals (D1) andconstruct, for example, the terminals of a switching transistor,respectively. Further, a lead terminal 3 is a source electrode terminal(S2) and a lead terminal 4 is a gate electrode terminal (G2) and leadterminals 6, 5 are drain terminals (D2) and construct, for example, theterminals of a rectifier transistor. Here, the arrangement of the leadterminal numbers is the same also in the description of the invention.

FIG. 22 is a schematic plan view to show in a transparent state asemiconductor chip fixing part, a semiconductor chip and leads in thepackage 81. As shown in FIG. 22, the leads 82 of the lead terminals 8, 7are formed in a structure in which they are coupled to a semiconductorchip fixing part 85 located in the package 81 and shaped like a square.Further, the lead terminals 1, 2 opposite to the lead terminals 8, 7 areformed independently of each other. The tip, that is, the inner end ofthe independent lead 82 is formed into a wire bonding pad 86 having awide width so as to enable wire bonding. A semiconductor chip 90 isfixed via a conductive adhesive 87 to the top surface of thesemiconductor chip fixing part 85 (see FIG. 23). This semiconductor chip90 has a vertically structured power MOSFET formed therein and has agate electrode pad 91 and a source electrode pad 92 formed on its topsurface and has a drain electrode formed on its bottom surface. Hence,the semiconductor chip 90 is fixed to the semiconductor chip fixing part85 with the conductive adhesive 87, whereby the leads 82 of the leadterminals 8, 7 construct drain terminals (D1). The wire bonding pad 86of the lead terminal 1 and the source electrode pad 92 of thesemiconductor chip 90 are electrically connected to each other by aplurality of conductive wires 93. The wire bonding pad 86 of the leadterminal 2 and the gate electrode pad 91 of the semiconductor chip 90are electrically connected to each other by a conductive wire 93. Inthis manner, a switching transistor is formed.

Further, similarly, as shown in FIG. 22, the leads 82 of the leadterminals 6, 5 are formed in a structure in which they are coupled to asemiconductor chip fixing part 95 located in the package 81 and shapedlike a square. Further, the lead terminals 3, 4 opposite to the leadterminals 6, 5 are formed independently of each other. The tip, that is,the inner end of the independent lead 82 is formed into a wire bondingpad 86 having a wide width so as to enable wire bonding. A semiconductorchip 96 is fixed via a conductive adhesive (not shown) to the topsurface of the semiconductor chip fixing part 95. This semiconductorchip 96 has a vertically structured power MOSFET formed therein and hasa gate electrode pad 97 and a source electrode pad 98 formed on its topsurface and has a drain electrode formed on its bottom surface. Hence,the semiconductor chip 90 is fixed to the semiconductor chip fixing part95 with the conductive adhesive, whereby the leads 82 of the leadterminals 6, 5 construct drain terminals (D2). The wire bonding pad 86of the lead terminal 3 and the source electrode pad 98 of thesemiconductor chip 96 are electrically connected to each other by aplurality of conductive wires 93. The wire bonding pad 86 of the leadterminal 4 and the gate electrode pad 97 of the semiconductor chip 90are electrically connected to each other by a conductive wire 93. Inthis manner, a rectifier transistor is formed.

The semiconductor 80 like this, shown in FIG. 24, is mounted on amounting board 100. That is, the mounting portions at the tips of theleads 82 protruding from both sides of the package 81 are mounted via anadhesive such as solder (not shown) to respective lands 101 formed onthe top surface of the mounting board 100.

For example, the width a of a lead is 0.4 mm, the pitch b of the lead is1.27 mm, a gap c between the leads is 0.87 mm, the width f of a land is0.76 mm, a gap g between the lands is 0.51 mm.

In this kind of semiconductor device in current use, a breakdown voltageis as low as, for example, 250 V or less and mainly of 30 V class. Onthe other hand, depending on a field where a semiconductor device isused, a semiconductor device having a higher breakdown voltage isdesired. For example, the above-described semiconductor device mountedwith two transistor chips is required to have a breakdown voltage ashigh as 600 V. However, in now-available products, a gap betweenneighboring leads is as narrow as 0.87 mm and it turned out that theincreasing of the breakdown voltage of the product results in increasinga potential that a short circuit might develop between the leads ofneighboring transistors and hence in making it impossible to provide ahigh breakdown voltage by the present structure.

According to the studies by the inventor, it turned out that in thepackage, the respective leads are covered with resin, which is a mainconstituent material of the package, and hence can secure acomparatively high breakdown voltage but that in the portions whereleads protrude from the package (side portions of the package), adischarge phenomenon develops between the neighboring leads to cause ashort circuit between the leads as a result.

SUMMARY OF THE INVENTION

An object of the invention is to increase the breakdown voltage of asemiconductor device mounted with a plurality of semiconductor chipseach having a transistor formed therein and the breakdown voltage of anelectronic device including the semiconductor device.

Another object of the invention is to provide a semiconductor devicemounted with a plurality of semiconductor chips each having a transistorformed the rein and having a small size and a high breakdown voltage andan electronic device including the semiconductor device.

The above-described objects and the other objects and new features ofthe invention will be clear from the description and the accompanyingdrawings of the present specification.

The brief description of the outlines of typical inventions of theinventions disclosed in this application will be provided as follows.

A semiconductor device (1) in accordance with the invention includes:

a first semiconductor chip that includes a transistor;

a second semiconductor chip that includes a transistor;

a package that packages the first and the second semiconductor device;

a first lead that is electrically connected to a first electrode on thetop surface of the first semiconductor chip and protrudes from a firstsurface (first side surface) which is a side surface of the package;

a second lead that is electrically connected to a control electrode onthe top surface of the first semiconductor chip and protrudes from thefirst surface of the package and is adjacent to the first lead;

a third lead that is electrically connected to a second electrodeprovided on the bottom surface of the opposite surface of the topsurface of the first semiconductor chip and protrudes from a secondsurface (second side surface) opposite to the first surface;

a fifth lead that is electrically connected to a first electrode on thetop surface of the second semiconductor chip and protrudes from a secondsurface of the package;

a sixth lead that is electrically connected to a control electrode onthe top of the second semiconductor chip and protrudes from the secondsurface of the package and is adjacent to the fourth lead; and

a seventh lead that is electrically connected to a second electrode onthe bottom surface of the opposite surface of the top surface of thesecond semiconductor chip and protrudes from the first surface of thepackage, and is characterized: in that arrangement positions of leadterminals 1 to 4 where four leads are arranged at predeterminedintervals are thought on the first surface of the package, in thatarrangement positions of lead terminals 8 to 5 arranged opposite to thelead terminals 1 to 4 are thought on the second surface of the package,in that the third lead is located at the lead terminal 1, in that thefifth lead is located at the lead terminal 3, in that the sixth lead islocated at the lead terminal 4, in that the seventh lead is located atthe lead terminal 5, in that the first lead is located at the leadterminal 7, and in that the second lead is located at the lead terminal8.

Further, a gap between the semiconductor chip fixing part and therespective leads whose tips face the semiconductor chip fixing part isas wide as from 0.3 mm to 0.7 mm. A transistor of each of the firstsemiconductor chip and the second semiconductor chip is a power fieldeffect transistor. The first electrode is a source electrode and thesecond electrode is a drain electrode and the control electrode is agate electrode.

The brief description of the advantages provided by the typicalinventions of the inventions disclosed in this application will beprovided as follows.

According to the above-described means (1),

-   (a) the means (1) has a structure in which the third lead (drain    lead) of the first semiconductor chip protrudes from the second    surface of the package and in which the seventh lead (drain lead) of    the second semiconductor chip protrudes from the first surface of    the opposite surface of the second surface of the package; further,    since a lead is not arranged at the position of a lead terminal 6    between the first lead (source lead) of the first semiconductor chip    of the package and the seventh lead (drain lead) of the second    semiconductor chip, a gap between the first lead (source lead) and    the seventh lead (drain lead) becomes wide; still further, since a    lead is not arranged at the position of a lead terminal 2 between    the third lead (drain lead) of the first semiconductor chip and the    fifth lead (source lead) of the second semiconductor chip, a gap    between the third lead (drain lead) and the fifth lead (source lead)    becomes wide. With these, it is possible to prevent a short circuit    from developing between the drain lead and the source lead adjacent    to the drain lead and hence to increase the dielectric strength of    the transistor formed in the first and the second semiconductor    chip. For example, it is possible to make the dielectric strength    between the source and the drain as large as the vicinity of 600 V.-   (b) The gap between the semiconductor chip fixing part and the    respective leads whose tips face the semiconductor chip fixing part    is as wide as from 0.3 mm to 0.7 mm. Hence, this can increase the    dielectric strength of resin filled in the gap and forming the    package. Therefore, it is possible to provide a semiconductor device    having a high dielectric strength.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view to show in a transparent statesemiconductor chips and inner leads in a package in a semiconductordevice of embodiment 1 of the invention.

FIG. 2 is a front view of the semiconductor device.

FIG. 3 is a plan view of the semiconductor device.

FIG. 4 is a side view of the semiconductor device

FIG. 5 is a sectional view along a line A-A in FIG. 3.

FIG. 6 is a schematic enlarged plan view of a semiconductor chiparranged in a package of the semiconductor device.

FIG. 7 is a schematic enlarged sectional view to show a portion of thesemiconductor chip.

FIG. 8 is a schematic plan view to show a state where a semiconductordevice of embodiment 1 is mounted on a mounting board.

FIG. 9 is a bridge circuit diagram of an electronic device in which asemiconductor device of embodiment 1 is built.

FIG. 10 is a flow chart to show a method of manufacturing asemiconductor device of embodiment 1.

FIG. 11 is a plan view to show a portion of a lead frame used in themanufacturing of the semiconductor device.

FIG. 12 is a plan view to show a portion of a lead frame in which chipbonding and wire bonding are finished in the manufacturing of thesemiconductor device.

FIG. 13 is a plan view to show a portion of a lead frame on which apackage is formed in the manufacturing of the semiconductor device.

FIG. 14 is a schematic plan view to show in a transparent state asemiconductor chip fixing parts and the like in a package in asemiconductor device of a modification of embodiment 1.

FIG. 15 is a schematic plan view to show in a transparent statesemiconductor chip fixing parts and inner leads in a package in asemiconductor device of embodiment 2 of the invention.

FIG. 16 is a schematic plan view to show in a transparent statesemiconductor chip fixing parts and inner leads in a package in asemiconductor device of embodiment 3 of the invention.

FIG. 17 is a schematic enlarged sectional view to show a portion of asemiconductor chip used for the semiconductor device of embodiment 3 ofthe invention.

FIG. 18 is a schematic plan view to show in a transparent statesemiconductor chip fixing parts and inner leads in a package in asemiconductor device of embodiment 4 of the invention.

FIG. 19 is a bridge circuit diagram of an electronic device in which asemiconductor device of embodiment 4 is built.

FIGS. 20A, 20B, and 20C are circuit diagrams to show examples of abridge circuit of an electronic device in which a semiconductor devicein accordance with the invention can be built.

FIG. 21 is a schematic plan view of a conventional semiconductor device.

FIG. 22 is a schematic plan view to show in a transparent statesemiconductor chip fixing parts and inner leads in a package in aconventional semiconductor device.

FIG. 23 is a schematic sectional view along a line B-B in FIG. 22.

FIG. 24 is a schematic plan view to show a state where a conventionalsemiconductor device is mounted on a mounting board.

DETAILED DESCRIPTION OF THE INVENTION

Hereafter, the preferred embodiments of the invention will be describedin detail with reference to the drawings. Here, throughout the drawingsto describe the preferred embodiments of the invention, parts having thesame functions are denoted by the same reference symbols and theirrepeated descriptions will be omitted.

Embodiment 1

In this embodiment will be described an example of applying theinvention to a semiconductor device having a construction in which twosemiconductor chips (the first semiconductor chip and the secondsemiconductor chip) each having a transistor formed therein are packagedin a single package. In this embodiment 1,an example of a semiconductorchip having a vertical type power MOSFET formed therein will bedescribed. The semiconductor device like this can be used as aconstituent part of, for example, a DC-DC converter circuit. Of the twotransistors (the first transistor and the second transistor), one is aswitching transistor and the other is a rectifier transistor.

FIGS. 1 to 14 are illustrations related to a semiconductor device ofthis embodiment 1. FIGS. 1 to 7 are illustrations related to thestructure of the semiconductor device. FIG. 8 is an illustration toshown a mounting state. FIG. 9 is a bridge circuit diagram in which thesemiconductor device of this embodiment 1 is used. FIGS. 10 to 13 areillustrations related to a method of manufacturing the semiconductordevice. Further, FIG. 14 is a schematic view to show a semiconductordevice of a modification of this embodiment 1.

A semiconductor device 1 of this embodiment 1, as shown in FIGS. 2 to 4,outwardly, includes a package 2 and a plurality of leads 3 protrudingfrom each of one pair of side surfaces opposite to each other of thispackage 2. The package 2 is formed of an insulating resin, for example,epoxy resin and is flat and square in a plan. The package 2 isrectangular and has leads 3 protruding respectively from the long sides.The lead 3 is formed in the shape of gull wings (see FIG. 5) and thesemiconductor device 1 is formed in a surface mount structure.

Positions where the lead terminals are arranged in both sides of thepackage 2 are determined. Hence, as shown in FIG. 1 and FIG. 3,positions where the leads 3 are arranged are denoted by the leadterminal numbers from 1 to 8. This embodiment 1 is of a toothlessstructure in which the leads are not provided at the positions of leadterminals 2, 6. The lead terminals are denoted anticlockwise along theperiphery of the package by the lead terminal number numbers from 1 to8. That is, as shown in FIG. 1, the lead terminals are denoted from theleft to the right along the lower long side of the package 2 by the leadterminal numbers from 1 to 4 and from the right to the left along theupper long side by the lead terminal numbers from 5 to 8. In thedrawing, lead terminal numbers 2, 6 are not shown because no lead isarranged at the portions corresponding to leads 2, 6.

In this embodiment 1, as shown in FIG. 1, the package 2 has twosemiconductor chips 4, 5. A vertical type power MOSFET is formed in eachof these semiconductor chips 4, 5. Here, a semiconductor chip having avertical type power MOSFET formed therein and a cell (MOSFET)constructing the vertical type power MOSFET will be described withreference to FIG. 6 and FIG. 7. In this regard, FIG. 6 and FIG. 7 willbe described by the use of symbols different from those in FIG. 1 andthe like.

A vertical type MOSFET is formed in the semiconductor chip 10 and, asshown in FIG. 7, a drain electrode 12 is formed as a bottom surfaceelectrode on the bottom surface of a semiconductor board 11 made of afirst conduction type (N type) silicon (Si). A first conduction type (Ntype) epitaxial layer 13 is formed over the main surface of thesemiconductor board 11. Gate electrodes 15 each formed made of apolysilicon film having a thickness of about several hundreds nm areselectively formed on the surface of the epitaxial layer 13 via a gateinsulating film 14 made of a SiO₂ film and having a thickness of aboutseveral hundreds nm.

Further, a second conduction type (P type) low impurity concentrationlayer 16, a P⁺ type high impurity concentration layer 17, and an N⁺ typesource region 18, which are formed by ion implantation and annealing,are formed in the surface portion of the epitaxial layer 13. The lowimpurity concentration layer 16 becomes a channel layer (base layer)With this, an N-channel type MOSFET can be formed.

On the other hand, the top surface and side surface of the gateelectrode 15 are covered with an insulating film 19 made of a SiO₂ filmor the like. A source electrode 20 is formed across a predeterminedregion on the surface of the exposed epitaxial layer 13 and theinsulating film 19. The high impurity concentration layer 17 and thesource region 18 surrounding this high impurity concentration layer 17are exposed from the insulating film 19, so that they are electricallyconnected to the source electrode 20. Further, the main surface of thesemiconductor board 11 including the source electrode 20 is covered withan insulating film 21. By removing the insulating film 21 partially toform openings, a source electrode pad 23 and a gate electrode pad 24electrically connected to the gate electrode 15 are formed as shown inFIG. 6.

FIG. 6 is a plan view of the semiconductor chip 10 and is anillustration to show schematically the source electrode 20, the sourceelectrode pad 23, and the gate electrode pad 24. Two protection ringelectrodes 25 of high breakdown voltage are formed outside the sourceelectrode 20 in such a way as to surround the source electrode 20. Aportion except for the source electrode pad 23 and the gate electrodepad 24 is covered with the insulating film 21. The semiconductor chip 10like this is used in this embodiment 1.

In the semiconductor device 1 of this embodiment 1, as shown in FIG. 1,a drain lead (D1: third lead) is protruded at the position of the leadterminal 1, a source lead (S1: first lead) is protruded at the positionof the lead terminal 7, and a gate lead (G1: second lead) is protrudedat the position of the lead terminal 8. In the drain lead (D1), aportion located in the package 2 is connected to a semiconductor chipfixing part (first chip mounting part) 7 mounted with the firstsemiconductor chip 4 and having a large area. A semiconductor chip 4 isfixed to the top surface of the semiconductor chip fixing part 7 via aconductive adhesive 9 (see FIG. 5). With this, the drain electrode onthe bottom surface of the semiconductor chip 4 is electrically connectedto the drain lead D1.

Further, the tip of the source lead S1 (first lead) and the tip of thegate lead G1 (second lead) face the periphery of the semiconductor chipfixing part 7. Each of the tip portions inserted into the package 2 ofthe source lead S1 and the gate lead G1 are formed so as to have adepression and a protrusion, thereby being provided with a wire bondingpad 8 having an enlarged width. The depression and the protrusion engagewith resin forming the package 2 to make the lead 3 hard to withdraw.Further, the enlarging of the width of the wire bonding pad 8 can securean area necessary for connecting a wire.

The source electrode pad 30 on the main surface of the semiconductorchip 4 is electrically connected to the wire bonding pad 8 of the sourcelead S1 with a plurality of conductive wires 31. Further, the gateelectrode pad 32 is electrically connected to the wire bonding pad 8 ofthe gate lead G1 with a conductive wire 31. The source lead S1, the gatelead G1, and the drain lead D1 construct the respective terminals of thefirst transistor, for example, a switching transistor.

Further, as shown in FIG. 1, a drain lead (D2: seventh lead) isprotruded at the position of the lead terminal 5, a source lead (S2:fifth lead) is protruded at the position of the lead terminal 3, and agate lead (G2: sixth lead) is protruded at the position of the leadterminal 4. In the drain lead (D2), a portion located in the package 2is connected to a semiconductor fixing part (second chip mounting part)35 mounted with the second semiconductor chip 5 and having a large area.The semiconductor chip 5 is fixed to the top surface of thesemiconductor chip fixing part 35 via a conductive adhesive (not shown).With this, the drain electrode on the bottom surface of thesemiconductor chip 5 is electrically connected to the drain lead D2.

Further, the tips of the source lead S2 and the gate lead G2 face theperiphery of the semiconductor chip fixing part 35. The tip portionsinserted into the package 2 of the source lead S2 and the gate lead G2are formed so as to have a depression and a protrusion, thereby beingprovided with a wire bonding pad 8 having an enlarged widths. Thedepression and the protrusion engage with resin forming the package 2 tomake the lead 3 hard to withdraw. Further, the enlarging of the width ofthe wire bonding pad 8 can secure an area necessary for connecting awire.

The source electrode pad 36 on the main surface of the semiconductorchip 5 is electrically connected to the wire bonding pad 8 of the sourcelead S2 with a plurality of conductive wires 31. Further, the gateelectrode pad 37 is electrically connected to the wire bonding pad 8 ofthe gate lead G2 with a conductive wire 31. The source lead S2, the gatelead G2, and the drain lead D2 construct the respective terminals of thesecond transistor, for example, a rectifier transistor.

In this embodiment 1, the vertical type power MOSFET formed in the firstand second semiconductor chips 4, 5 has a breakdown voltage of 600 V.Hence, to increase the breakdown voltage of the resin, the gap betweenthe semiconductor chip fixing part 7 and the tips located in the package2 of the source lead S1 and the gate lead G1 and the periphery of thesemiconductor chip fixing part 7 are made larger from about 0.2 mm in aconventional semiconductor chip to about 0.7 mm to enhance the breakdownvoltage of the resin. Further, similarly, the gap between thesemiconductor chip fixing part 35 and the tips located in the package 2of the source lead S2 and the gate lead G2 and the periphery of thesemiconductor chip fixing part 35 are made larger from about 0.2 mm in aconventional semiconductor chip to about 0.7 mm to enhance the breakdownvoltage of the resin.

Further, to prevent a short circuit from developing between the firsttransistor and the second transistor, the gap between the semiconductorchip fixing part 7 and the semiconductor chip fixing part 35 is alsoincreased from about 0.2 mm in a conventional semiconductor chip toabout 0.4 mm. Here, in this embodiment 1, the sides opposite to eachother of the semiconductor chip fixing part 7 and the semiconductor chipfixing part 35 are stepped in the direction of the side, respectively.These are pressing portions to prevent the semiconductor chip fixingpart 7 and the semiconductor chip fixing part 35 from being raised atthe time of wire bonding.

FIG. 8 is an illustration to show a plane state where the semiconductordevice 1 of this embodiment 1 is mounted on a mounting board 40. Thatis, mounting portions at the tips of the leads 3 protruding from bothsides of the package 2 are mounted on the respective lands 41 formed onthe top surface of the mounting board 40 via an adhesive (not shown)such as solder.

For example, the width a of the lead is 0.4 mm, the pitch b of the leadis 1.27 mm, a gap c between the leads is 0.87 mm, the width f of theland is 0.7 mm, a gap g between the lands is 0.51 mm. Further, the pitchd of neighboring leads 3 at a toothless portion is 2.14 mm and a gap hbetween the neighboring lands 41 at the toothless portion is 1.78 mm.

FIG. 10 is a bridge circuit diagram in an electronic device using thesemiconductor device 1 of this embodiment 1. This circuit diagram is afull bridge circuit and uses four transistors Q1 to Q4 as transistors.All of these transistors are n-channel type MOSFETs. This circuit iscommonly used in such a way that a load 65 is controlled by alongitudinal combination of the transistors Q1+Q2 or Q3+Q4. In thiscase, the terminals across which high voltage (100 V or more) is notplaced are G1−S1 and G2−S2 and high voltage is placed across the otherterminals. Hence, the semiconductor device 1 of this embodiment 1 can beused for the longitudinal connection circuit portions of the transistorsQ1 and Q2. This circuit can be suitably used for a motor inverter. Whilea full bridge construction is shown in FIG. 9, the semiconductor device1 of this embodiment 1 can be also used for a circuit of half bridgeconstruction.

Next, a method of manufacturing the semiconductor device 1 of thisembodiment 1 will be described in brief. As shown by a flow chart inFIG. 10, a wafer having a vertical type power MOSFET formed thereon isprepared (reception of wafer: S01). Next, the wafer is divided by dicingto form a semiconductor chip (dicing: S02). Further, at this stage, alead frame used for manufacturing the semiconductor device 1 is prepared(frame: S03) and a Ag paste is prepared (Ag paste: S04).

Next, the semiconductor chip is fixed to the semiconductor chip fixingpart of the lead frame with the Ag paste (adhesive) and then the Agpaste is baked, thereby being hardened (bonding of pellet and baking:S05).

Next, wire bonding is performed to connect the source lead to the sourceelectrode pad with a wire and to connect the gate lead to the gateelectrode pad with a wire (wire bonding: S06). At this time, an Au wireis prepared (Au wire: S07)

Next, a package is formed by a transfer molding (molding and baking:S08). At this time, a predetermined resin for sealing is prepared(resin: S09). The package is formed by the transfer molding and then aprocessing of hardening the resin is performed.

Next, the unnecessary portions of the lead frame are cut and removed andthe leads protruding from the package are formed in the shape of gullwings (cutting and forming: S10).

Next, products are selected (S11) and good products are packed (S12) andare shipped (S13).

Here, referring to FIGS. 11 to 13, a stage of fixing the semiconductorchip to the lead frame and performing wire bonding to form a packagewill be described. In the manufacturing of the semiconductor device 1, alead frame 45 shown in FIG. 11 is used. This lead frame is such that athin metal sheet (for example, made of cupper alloy) having a thicknessof about 0.2 mm is formed into a predetermined shape and has a structurein which a plurality of lead patterns are arranged side by side. Thelead frame is formed in the shape of a rectangle formed of a pair oflateral frames and a pair of longitudinal frames. In FIG. 11, a pair oflateral frames, a left longitudinal frame, and a portion extending fromthe left longitudinal frame are omitted; and a right longitudinal frame46, two dam pieces 49 extending in parallel from the right longitudinalframe 46, and connection parts 48 for connecting a pair of dam pieces 49at predetermined intervals are shown. One lead pattern 47 is formedbetween the longitudinal frame 46 and a connection part 48 and one leadpattern 47 is formed also between the connection part 48 and theconnection part 48. One semiconductor device 1 is manufactured by eachlead pattern 47.

In each lead pattern 47, three leads 3 are arranged on each dam piece49. This lead 3 has the same pattern as that in FIG. 1. Further, theabove-described semiconductor chip fixing parts 7, 35 are connected tothe tip portions (inner end portions) of the predetermined leads 3.Further, a slender support piece 50 protruding from the outer peripheryof the semiconductor chip fixing part 7 is connected to and supported bythe connection part 48 and a slender support piece 51 protruding fromthe outer periphery of the semiconductor chip fixing part 35 isconnected to and supported by the connection part 48 or the longitudinalframe 46. The leads 3 extending from the dam piece 49 are connected tothe lateral frame (not shown). The leads 3 in this region extend inparallel to the longitudinal frame 46. Further, a predetermined coatingfilm is formed on the surface thereof, if necessary. The lead frame 45has a thickness of, for example, 0.2 mm and the sizes of the respectivepatterns are those described above.

The lead frame 45 like this is prepared and then, as shown in FIG. 12,the semiconductor chip 4 is located on and fixed to the semiconductorchip fixing part 7 with the Ag paste and the semiconductor chip 5 islocated on and fixed to the semiconductor chip fixing part 35 with theAg paste. After fixing, the Ag paste is subjected to a baking treatment,thereby being hardened.

Next, as shown in FIG. 12, in the semiconductor chip 4, the gateelectrode pad 32 is connected to the wire bonding pad 8 of the gate leadG1 with a wire 31 and the source electrode pad 30 is connected to thewire bonding pad 8 of the source lead S1 with wires 31. Further, in thesemiconductor chip 5, the gate electrode pad 37 is connected to the wirebonding pad 8 of the gate lead G2 with a wire 31 and the sourceelectrode pad 36 is connected to the wire bonding pad 8 of the sourcelead S2 with wires 31.

Next, as shown in FIG. 13, the package 2 is formed by the transfermolding. The package 2 is formed in such a way as to cover the top andbottom surfaces of the lead frame 45. The package 2 covers thesemiconductor chips 4, 5, the semiconductor chip fixing parts 7, 35, theinner end portions of the leads 3, and the wires 31.

Next, the unnecessary portions of the lead frame are cut and removed andthe leads 3 are cut at predetermined positions and the leads 3protruding from the sides of the package 2 are formed in the shape ofgull wings to form the semiconductor device 1 shown in FIGS. 2 to 5.

FIG. 14 is a schematic view to show the semiconductor device 1 that is amodification of this embodiment 1. This modification has a structure inwhich the sides opposite to each other of the semiconductor chip fixingpart 7 and the semiconductor chip fixing part 35 extend linearly inparallel. A gap between the semiconductor chip fixing part 7 and thegate lead G1 and the source lead S1 is 0.2 mm and a gap between thesemiconductor chip fixing part 35 and the source lead S2 and the gatelead G2 is also 0.2 mm. Further, a gap between the semiconductor chipfixing part 7 and the semiconductor chip fixing part 35 is also 0.2 mm.Since this modification has a toothless structure, the semiconductordevice 1 has a breakdown voltage of 300 V or more and 600 V.

According to this embodiment 1, the following advantages are provided.

-   (1) The semiconductor device has a structure in which the drain lead    D1 of the first semiconductor chip 4 protrudes from the second    surface of the package 2 and in which the drain lead D2 of the    second semiconductor chip 5 protrudes from the first surface which    is a surface opposite to the second surface of the package 2.    Further, a lead is not arranged at the position which is located    between the source lead S1 of the first semiconductor chip 4 and the    drain lead D2 of the second semiconductor chip 5 of the package 2    and in which a lead terminal 6 is to be arranged, so that a gap    between the source lead S1 and the drain lead D2 is as wide as    2.12 mm. Still further, a lead is not arranged at the position which    is located between the drain lead D1 of the first semiconductor chip    4 and the source lead S2 of the second semiconductor chip 5 and in    which a lead terminal 2 is to be arranged, so that a gap between the    drain lead D1 and the source lead S2 is as wide as 2.12 mm. With    this, it is possible to prevent a short circuit from developing    across the leads and hence to increase the breakdown voltage of the    transistor formed on the first and second semiconductor chips 4, 5.    For example, it is possible to make the breakdown voltage across the    source and drain between the neighboring transistors of the    semiconductor device 1 as large as the vicinity of 600 V.-   (2) A gap between the semiconductor chip fixing part and the tips of    the respective leads whose tips face the semiconductor chip fixing    part is as wide as from 0.3 mm to 0.7 mm, so that the breakdown    voltage of the resin filled into the gap and forming the package is    increased, which results in providing a semiconductor device having    a high dielectric strength. While the dielectric strength varies    depending on measurement methods, taking one example, in a case    where resin such as epoxy resin exists between the leads, the    dielectric strength of the resin is 15,000 V/mm. Further, in a case    where air exists between the leads, the dielectric strength of the    air is 3,000 V/mm. Hence, in the case of this embodiment 1, the    resin exists in a thickness of from 0.3 mm to 0.7 mm between the    leads and hence the resin has a high dielectric strength far higher    than 600 V and, even taking a factor of safety into account, there    is provided a highly dielectric excellent product.-   (3) Since the semiconductor device of this embodiment 1 is different    from a conventional semiconductor device only in a portion of a lead    frame pattern, the semiconductor device 1 of this embodiment 1 can    be produced only by changing a cutting die of a press machine in a    currently used line of an apparatus for manufacturing a conventional    semiconductor device. Hence, it is possible to produce the    semiconductor device in volume while reducing the amount of    investment and hence to reduce product cost.

Embodiment 2

FIG. 15 is a schematic view to show a semiconductor device of theembodiment 2 of the invention. FIG. 15 is a schematic plan view to showin a transparent state the semiconductor chip fixing part, inner leadsand the like in the package.

The embodiment 2 is such that the leads 3 are arranged also at thepositions of a lead terminal 2 and a lead terminal 6 in thesemiconductor device 1 of the modification of the embodiment 1. That is,in the 4th lead arranged at the position of the lead terminal 2, the tipportion (inner end portion) located in the package 2 is connected to thesemiconductor chip fixing part 7 to form a drain lead D1. Further, inthe 8th lead arranged at the position of the lead terminal 6, the tipportion (inner end portion) located in the package 2 is connected to thesemiconductor chip fixing part 35 to form a drain lead D2.

In the semiconductor device 1 of this embodiment 2, the gap between theneighboring drain lead D1 and the source lead S2 and the gap between theneighboring drain lead D2 and the source lead S1 are 0.87 mm,respectively. Further, all of the gap between the semiconductor chipfixing part 7 and gate lead G1 and the source lead S1, the gap betweenthe semiconductor chip fixing part 35 and gate lead G2 and the sourcelead S2, and the gap between the semiconductor chip fixing part 7 andthe semiconductor chip fixing part 35 are 0.2 mm. As a result, it ispossible to make the semiconductor device 1 of the embodiment 2 a highlydielectric product whose upper dielectric strength is close to 300 V.The molding die, cutting die, and forming die of a SOP8 which is astandard outside shape can be used in the manufacturing of this package.

Embodiment 3

FIG. 16 and FIG. 17 are illustrations related to a semiconductor deviceof embodiment 3 of the invention. FIG. 16 is a schematic plan view toshow in a transparent state the semiconductor chip fixing part and innerleads in the package in the semiconductor device. FIG. 17 is a schematicenlarged sectional view to show a portion of a semiconductor chip usedfor the semiconductor device.

In the semiconductor device 1 of the embodiment 1, the transistors ofthe semiconductor chips 4, 5 are N-channel type vertical MOSFET. In thesemiconductor device 1 of this embodiment 3, the transistor of thesemiconductor chip 4 is an N-channel type vertical MOSFET (Nch) and theother structure is the same as the semiconductor device 1 of theembodiment 1 except that the transistor of the semiconductor chip 5 is aP-channel type vertical MOSFET.

FIG. 17 shows an illustration to show the cell portion of the P-channeltype vertical MOSFET. The P-channel type vertical MOSFET has the samestructure as the N-channel type vertical MOSFET shown in FIG. 7 exceptthat the conduction type of a semiconductor layer (semiconductor region)is changed to an opposite conduction type. That is, the semiconductorboard 11 is a P-type silicon board and the epitaxial layer 13 is a Ptype and the low impurity concentration layer 16 is an N type and thehigh impurity concentration layer 17 is an N⁺ type and the source region18 is a P⁺ type. The low impurity concentration region 16 becomes achannel layer (base layer). With this, there is provided a P-channeltype vertical MOSFET.

The semiconductor device 1 of this embodiment 3 has a constructionhaving the N-channel type vertical MOSFET and the P-channel typevertical MOSFET. This can provide an advantage that two FETs can becontrolled by a simple drive circuit.

Embodiment 4

FIG. 18 and FIG. 19 are illustrations related to a semiconductor deviceof embodiment 4 of the invention. FIG. 18 is a schematic plan view toshow in a transparent state the semiconductor chip fixing part and innerleads in the package in the semiconductor device. FIG. 19 is a bridgecircuit of an electronic device in which the semiconductor device of theembodiment 4 is built.

The semiconductor device 1 of this embodiment 4 is different from thesemiconductor device 1 of the embodiment 1 in a structure that thesemiconductor chip fixing part 7 is connected to the semiconductor chipfixing part 35 by a connection part 60. Further, another different pointis that the semiconductor chip 4 made of the P-channel type verticalMOSFET (Pch) is fixed on the semiconductor chip fixing part 7 and thatthe semiconductor chip 5 made of the N-channel type vertical MOSFET(Nch) is fixed on the semiconductor chip fixing part 35. The otherportions are the same as those in the semiconductor device 1 of theembodiment 1.

The semiconductor device 1 like this can be used for the full bridgecircuit of an electronic device shown in FIG. 19. In this full bridgecircuit, four transistors Q1 to Q4 are used. In this circuit, generally,a load 66 is controlled by a longitudinal combination of Q1+Q2, orQ3+Q4. In this case, terminals across which high voltage (100 V or more)is not placed are G1−S1, G2−S2, and D1−D2. The high voltage is placedacross the other terminals. Hence, the semiconductor device 1 of thisembodiment 4 can be used for the longitudinal connection circuit portionof the transistors Q1 and Q2. The connection of the drain lead D1 to thedrain lead D2 is realized by integrating the semiconductor chip fixingpart 7 with the semiconductor chip fixing part 35 through the connectionpart 60 in the package 2. This circuit can be suitably used for, forexample, a switching power source. FIG. 19 shows the full bridge circuitand the semiconductor device 1 of this embodiment 4 can be used also fora circuit of half bridge construction.

The semiconductor device related to the invention in which twotransistors are built in a single package 2 can be used also for theother circuit of the electronic device by the selection of thetransistors to be built-in and the way of connection of the transistors.FIG. 20 shows circuit examples to which the semiconductor device of theinvention can be applied.

FIG. 20( a) is a full bridge circuit including the transistors Q1 to Q4,and Q1 and Q3 are bipolar transistors, and Q2 and Q4 are the N-channeltype vertical MOSFETs, and a lateral combination of Q2+Q4 is constructedof the semiconductor devices 1 of this embodiment. A load 67 iscontrolled by the transistors of longitudinal combinations of Q1+Q2 andQ3+Q4. In this case, the terminals across which high voltage (100 V ormore) is not placed are G1−S2 and G2−S2 and the high voltage is placedacross the terminals D2−D4 and across the other terminals. This circuitcan be suitably used for, for example, a liquid crystal back lightinverter. FIG. 20( a) shows a full bridge circuit and the semiconductordevice 1 of this embodiment 4 can be used also for a circuit of halfbridge construction.

FIG. 20( b) is a circuit using the transistors Q1 and Q2. The transistorQ1 is an N-channel type vertical MOSFET and the transistor Q2 is aP-channel type vertical MOSFET. The lateral combination of Q1+Q2 isconstructed of the semiconductor device 1 of this embodiment. A lamp(load) 68 like a fluorescent lamp is operated by the lateral combinationof Q1+Q2. In this case, the terminals across which high voltage (100 Vor more) is not placed are G1−S1, G2−S2, and S1−D2 and the high voltageis placed across the other terminals. This circuit is a source commonconnection and can be suitably used for, for example, an inverter(self-excited type) for a bulb type fluorescent lamp.

FIG. 20( c) is a circuit using the transistors Q1 and Q2. Both of thetransistors Q1 and Q2 are N-channel type vertical MOSFETs. The lateralcombination of Q1+Q2 is constructed of the semiconductor device 1 ofthis embodiment. Loads 69, 70 are operated by the transistors Q1, Q2,respectively. In this case, the terminals across which high voltage (100V or more) is not placed are G1−S1, G2−S2, and S1−D2 and the highvoltage is placed across the other terminals. This circuit is aswitching connection and can be suitably used for, for example, aselector switch of various kinds of electronic devices.

Up to this point, the invention made by the inventor has been concretelydescribed on the basis of the embodiments. However, the invention is notlimited to the above-described embodiments but, needless to say, can bechanged or modified variously within a scope not departing from thespirit of the invention.

1. A semiconductor device comprising: a first semiconductor chipincluding a N-channel type MISFET and having a first gate electrode, afirst source electrode and a first drain electrode, a secondsemiconductor chip including a N-channel type MISFET and having a secondgate electrode, a second source electrode and a second drain electrode,a first gate lead, a first source lead and a first drain leadelectrically connected to the first gate electrode, the first sourceelectrode and the first drain electrode, respectively, the first gatelead, the first source lead and the first drain lead having a first gatelead terminal, a first source lead terminal and a first drain leadterminal, respectively; a second gate lead, a second source lead and asecond drain lead electrically connected to the second gate electrode,the second source electrode and the second drain electrode,respectively, the second gate lead, the second source lead and thesecond drain lead having a second gate lead terminal, a second sourcelead terminal and a second drain lead terminal, respectively; and aninsulating resin covering the first and second semiconductor chips andparts of the first gate lead, the first source lead, the first drainlead, the second gate lead, the second source lead and the second drainlead, the insulating resin having a first side surface and a second sidesurface opposite to the first side surface, wherein the first gate leadterminal, the first source lead terminal and the second drain leadterminal protrude from the first side surface of the insulating resin,wherein the first source lead terminal is positioned between the firstgate lead terminal and the second drain lead terminal, wherein the firstdrain lead terminal, the second source lead terminal and the second gatelead terminal protrude from the second side surface of the insulatingresin, wherein the second source lead terminal is positioned between thefirst drain lead terminal and the second gate lead terminal, wherein afirst distance between the second drain lead terminal and the firstsource lead terminal is greater than a second distance between the firstsource lead terminal and the first gate lead terminal, and wherein athird distance between the first drain lead terminal and the secondsource lead terminal is greater than a fourth distance between thesecond source lead terminal and the second gate lead terminal.
 2. Asemiconductor device according to claim 1, wherein each of the first andsecond semiconductor chips has a top surface and a bottom surfaceopposite to the top surface, wherein the first gate electrode and firstsource electrode are disposed on the top surface of the firstsemiconductor chip; wherein the first drain electrode is disposed on thebottom surface of the first semiconductor chip, wherein the second gateelectrode and second source electrode are disposed on the top surface ofthe second semiconductor chip, and wherein the second drain electrode isdisposed on the bottom surface of the second semiconductor chip.
 3. Asemiconductor device according to claim 1, wherein the first gateelectrode and the first gate lead are electrically connected via a firstgate wire, wherein the first source electrode and the first source leadare electrically connected via a first source wire, wherein the secondgate electrode and the second gate lead are electrically connected via asecond gate wire, and wherein the second source electrode and the secondsource lead are electrically connected via a second source wire.
 4. Asemiconductor device according to claim 1, wherein the first leadincludes a first chip mounting portion disposed inside the insulatingresin, wherein the second lead includes a second chip mounting portiondisposed inside the insulating resin, wherein the first semiconductorchip is mounted on the first chip mounting portion, and wherein thesecond semiconductor chip is mounted on the second chip mountingportion.
 5. A semiconductor device according to claim 1, wherein theN-channel type MISFET and the P-channel type MISFET are vertical typepower MOSFETs
 6. A semiconductor device according to claim 1, whereinthe N-channel type MISFET has a breakdown voltage of 600 V.
 7. Asemiconductor device according to claim 1, wherein the P-channel typeMISFET has a breakdown voltage of 600 V.